Oct 19, 2017 · Zone English Version 0.0 Zone English Version is a Call of Duty 4: Modern Warfare (PC) replacement .
Call Of Duty 4 Zone English Download1. Field of the Invention
The present invention relates to a substrate processing method, and more particularly to a substrate processing method used for the formation of interconnects such as vias, plug electrodes and metal wires on the substrate.
2. Description of the Related Art
As semiconductor devices have become more highly integrated, a three-dimensional stacked structure has been required in the stacking of substrates having various structures. Therefore, contact hole plugs have come to be formed not only in the substrate surface, but also in a through-hole provided in the substrate, in order to electrically connect a lower interconnect layer with an upper interconnect layer.
An aluminum (Al) film is generally used for forming an Al plug in the contact hole. However, an Al film is not suitable for forming a plug having fine interconnect lines such as lines having a width of 1 μm or less, for example. Therefore, in recent years, tungsten (W) has come to be used as the material of the plug.
There is disclosed a method of forming a tungsten (W) plug by sequentially filling a first-stage interconnect hole with tungsten (W) by using a CVD method (CVD: chemical vapor deposition) in, for example, Japanese Unexamined Patent Publication No. 2000-258610. Also, there is disclosed a method of forming a tungsten (W) plug by sequentially filling a first-stage interconnect hole with tungsten (W) by using a CVD method in, for example, Japanese Unexamined Patent Publication No. 2001-262615.
There is also disclosed a method of filling the first-stage interconnect hole with tungsten (W) by a sputtering method after forming a thin titanium (Ti) film on the first-stage interconnect hole. There is also disclosed a method of forming a titanium (Ti) film on the first-stage interconnect hole by a sputtering method, forming a titanium nitride (TiN) film by a CVD method, and then removing a region where the plug is to be formed by an etching method.
As described above, the W plug is formed by a conventional method in which the W plug is formed on a first-stage interconnect ac619d1d87
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